Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for SRAM reliability. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 µm MOSFET’s: a 3-D atomistic simulation study. Physics of Semiconductor Devices 3rd edn (Wiley-Interscience, 2007).Īsenov, A. (page 13, Table MM9) International Roadmap for Devices and Systems IRDS 2022 More Moore () (2022). Considerations for ultimate CMOS scaling. Commercialization of 3D FinFETs.īohr, M., Chau, R., Ghani, T. In IEEE VLSI Technology Symposium 131–132 (IEEE, 2012). A 22 nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors. Commercialization of high- k + metal-gate CMOS technology.Īuth, C. In IEEE International Electron Devices Meeting 247–250 (IEEE, 2007). A 45 nm logic technology with high- k + metal gate transistors, strained silicon, 9 Cu interconnect layers, 193 nm dry patterning, and 100% Pb-free packaging. Commercialization of strained-silicon technology. In IEEE International Electron Devices Meeting 978–980 (IEEE, 2003). A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors. Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques. In IEEE International Electron Devices Meeting 583–586 (IEEE, 1997). A 2.0V, 0.35 µm partially depleted SOI-CMOS technology. Design of ion-implanted MOSFET’s with very small physical dimensions. In IEEE International Electron Devices Meeting 673–676 (IEEE, 2017).ĭennard, R. A 10 nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, self-aligned quad patterning, contact over active gate and cobalt local interconnects. Electric field controlled semiconductor device. The key enabling innovation responsible for the rise of MOSFETs. Stabilization of silicon surfaces by thermally grown oxides. Method and apparatus for controlling electric currents. Demonstration of a solid-state transistor. Instrument for converting alternating electric currents into continuous currents. We anticipate that innovations in transistor technologies will continue to have a central role in driving future materials, device physics and topology, heterogeneous vertical and lateral integration, and computing technologies.įleming, J. We also detail our vision of beyond-MOSFET future transistors and potential innovation opportunities. We focus our evaluation on identifying the most promising sub-10-nanometre-gate-length MOSFETs based on the knowledge derived from previous scaling efforts, as well as the research efforts needed to make the transistors relevant to future logic integrated-circuit products. Here we present a comprehensive assessment of the existing and future CMOS technologies, and discuss the challenges and opportunities for the design of FETs with sub-10-nanometre gate length based on a hierarchical framework established for FET scaling. However, the downscaling of transistors while keeping the power consumption low is increasingly challenging, even for the state-of-the-art fin field-effect transistors. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past six decades the physical gate length of MOSFETs has been scaled to sub-20 nanometres. Just glue them straight to the surface in that case.The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of complementary metal–oxide–semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. The connections on the poly-blocks are very thin, so some printer might have problems. vdd.stl + vss.stl + out.stl + 7x via.stl (silver PLA, flipped, 15% infill, ~1.5h)Įverything should just snap together, but I added some glue to make it more stable.poly.stl (green PLA, flipped, 15% infill, ~30min).welltap.tl + diff_n.stl (yellow PLA, flipped, 10% infill, ~20min).welltap.stl + diff_p.stl (red PLA, flipped, 10% infill ~20min).bulk.stl (white PLA, upright, 15% infill, ~3h).The two "poly.stl" should also be the same color. I recommend silver for the metal parts (vdd.stl, vss.stl, via.stl and out.stl), the other parts can be printed in whatever colors you like, but the bottom left "welltap.stl" and the top right "diff_p.stl" as well as the top left "welltap.stl" and the bottom right "diff_n.stl" should be the same color. To make this look awesome, you need 5 different colors (you don't need a multimaterial printer though).
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